Study of InP surface treatments by scanning photoluminescence microscopy
- 1 July 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (1), 392-395
- https://doi.org/10.1063/1.337660
Abstract
Spatially resolved photoluminescence (PL) measurements are used to study the effect of etching (HF, HNO3, NH4OH, H2O2) and annealing of InP surface. We reveal a strong nonuniformity of the PL intensity on a microscopic scale and a large dependence of the morphology of the PL images on chemical treatment and annealing of InP samples.Keywords
This publication has 4 references indexed in Scilit:
- Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator depositionJournal of Applied Physics, 1985
- Photoluminescence and x-ray photoelectron spectroscopy measurements of InP surface treated by acid and base solutionsApplied Physics Letters, 1984
- Resonant hemispherical dielectric antennaElectronics Letters, 1984
- InP Schottky contacts with increased barrier heightSolid-State Electronics, 1982