Evidence for interfacial defects in metal-insulator-InP structures induced by the insulator deposition
- 15 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6), 2322-2324
- https://doi.org/10.1063/1.334335
Abstract
Photoluminescence (PL) intensity on n‐type InP at room temperature is found to provide a convenient probe of the density of surface states in the upper part of the gap of InP. PL measurements are used to monitor the interaction phenomena occurring between an insulator (Al2O3, SiOx) and the InP substrate during the first stages of its deposition. Despite the use of a soft deposition technique, the insulator induces systematically interfacial defects in metal‐insulator‐InP structures. The nature of the insulator and, to a larger extent, the InP surface preparation and the substrate temperature (although kept below 150 °C) play a major role.Keywords
This publication has 16 references indexed in Scilit:
- Photoluminescence and x-ray photoelectron spectroscopy measurements of InP surface treated by acid and base solutionsApplied Physics Letters, 1984
- Chemical cleaning of InP surfaces: Oxide composition and electrical propertiesJournal of Applied Physics, 1984
- Processing of InP MIS devices monitored via photoluminescence measurementsElectronics Letters, 1984
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Influence de la technique de dépôt d'isolant et des modes de décapage du semiconducteur sur les propriétés électriques de structures métal-Al 2O3-InPRevue de Physique Appliquée, 1983
- Flat Band State Determination of MIS and Schottky Interfaces by Modulated Photoluminescence MethodJapanese Journal of Applied Physics, 1981
- Bias-dependent photoluminescence intensities in n-InP Schottky diodesJournal of Applied Physics, 1980
- I n s i t u measurements of photoluminescence intensities from cleaved (110) surfaces of n-type InP in a vacuum and gas ambientsApplied Physics Letters, 1979
- Ambient gas influence on photoluminescence intensity from InP and GaAs cleaved surfacesApplied Physics Letters, 1978
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977