Enhanced inelastic scattering and localization of excitons inIn0.53Ga0.47As/InP alloy quantum wells

Abstract
Spectral hole-burning in In0.53 Ga0.47As/InP alloy quantum wells show strong localization of all excitons at low temperatures and enhanced inelastic scattering over GaAs quantum wells. The observed scattering rate agrees with the phonon-assisted tunneling model proposed by Takagahara.