Observation of optical Stark effect in InGaAs/InP multiple quantum wells
- 20 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (3), 152-154
- https://doi.org/10.1063/1.98905
Abstract
We report an experimental observation of a blue shift in the n=1 heavy‐hole exciton line of In0.53Ga0.47As/InP multiple quantum wells resulting from a picosecond photoexcitation in the transparent spectral region. The temporal response of this shift follows the excitation and it is attributed to the optical Stark effect. The shift was measured to be 0.19 meV for an incident light with a photon energy 20 meV below the exciton peak and with a 10‐MW/cm2 intensity.Keywords
This publication has 9 references indexed in Scilit:
- Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wellsApplied Physics Letters, 1987
- 1.55-μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wellsApplied Physics Letters, 1987
- Collective Excitations and the Dynamical Stark Effect in a Coherently Driven Exciton SystemPhysical Review Letters, 1986
- Optical Stark effect on excitons in GaAs quantum wellsOptics Letters, 1986
- Ultrafast all-optical gate with subpicosecond O N and O F F response timeApplied Physics Letters, 1986
- Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxyApplied Physics Letters, 1986
- "Dressed Excitons" in a Multiple-Quantum-Well Structure: Evidence for an Optical Stark Effect with Femtosecond Response TimePhysical Review Letters, 1986
- Two-wavelength absorption modulation spectroscopy of bandtail absorption in GaAs quantum wellsApplied Physics Letters, 1986
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984