Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane
- 13 December 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (24), 3347-3349
- https://doi.org/10.1063/1.110140
Abstract
Low‐pressure chemical vapor deposition of SiC on carbonized Si from the single‐source organosilane precursor silacyclobutane (c‐C3H6SiH2,SCB) has been investigated from 800 to 1200 °C. On atmospheric pressure‐carbonized (100)Si, SiC films grown at 900 °C and above exhibit a transmission electron diffraction pattern consisting only of sharp spots with cubic symmetry. X‐ray diffraction (XRD) of these films exhibit primarily the (200) and (400) SiC lines. XRD of films grown at 900 °C on Si(111) exhibits only an extremely large SiC(111) peak with a full width at half‐maximum of 450 arcsec. Using a SCB flow rate of 1 sccm, a SiC growth rate of 4–5 μm/h was obtained on Si at 900 °C. Crystalline SiC films have also been grown by SCB at a temperature of 800 °C.Keywords
This publication has 16 references indexed in Scilit:
- Low‐Temperature Growth of 3 C ‐ SiC on Si Substrate by Chemical Vapor Deposition Using Hexamethyldisilane as a Source MaterialJournal of the Electrochemical Society, 1992
- Single-crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor depositionApplied Physics Letters, 1992
- Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/IEEE Transactions on Electron Devices, 1992
- Chemical Vapor Deposition of SiC from Silacyclobutane and MethylsilaneMRS Proceedings, 1992
- Investigations of (1,3-Dimethyl-3-methylsilamethylene - disilacyclobutane) as a Single Source CVD Precursor to Silicon CarbideMRS Proceedings, 1990
- A Polymeric Electrolyte Rechargeable Lithium BatteryJournal of the Electrochemical Society, 1988
- Epitaxial growth and electric characteristics of cubic SiC on siliconJournal of Applied Physics, 1987
- The growth of hetero-epitaxial SiC films by pyrolysis of various alkyl-silicon compoundsJournal of Crystal Growth, 1974
- Growth, Texture, and Surface Morphology of SiC LayersJournal of the Electrochemical Society, 1971
- Synthesis of Silacyclobutane and Some Related CompoundsJournal of the American Chemical Society, 1967