Growth of crystalline 3C-SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane

Abstract

Low‐pressure chemical vapor deposition of SiC on carbonized Si from the single‐source organosilane precursor silacyclobutane (c‐C₃H₆SiH₂,SCB) has been investigated from 800 to 1200 °C. On atmospheric pressure‐carbonized (100)Si, SiC films grown at 900 °C and above exhibit a transmission electron diffraction pattern consisting only of sharp spots with cubic symmetry. X‐ray diffraction (XRD) of these films exhibit primarily the (200) and (400) SiC lines. XRD of films grown at 900 °C on Si(111) exhibits only an extremely large SiC(111) peak with a full width at half‐maximum of 450 arcsec. Using a SCB flow rate of 1 sccm, a SiC growth rate of 4–5 μm/h was obtained on Si at 900 °C. Crystalline SiC films have also been grown by SCB at a temperature of 800 °C.