Layer intermixing during metal/metal oxide adsorption: Ti/sapphire(0001)
- 26 September 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (12), 125408
- https://doi.org/10.1103/physrevb.66.125408
Abstract
First principles density functional calculations for adsorption of Ti on indicate that interfaces become intermixed. Substitutional Ti replaces a surface Al atom rather than a subsurface Al, and the Al-terminated surface is unstable under Ti adsorption. Adsorbed Ti displaces the surface Al, resulting in a mixed Ti/Al interfacial layer instead of a sharp interface. Our results provide a coherent picture of the structural and electronic properties of this interface and are consistent with available experimental data.
Keywords
This publication has 34 references indexed in Scilit:
- Silver layers on oxide surfaces: morphology and optical propertiesSurface Science, 2001
- Petawatt laser system and experimentsIEEE Journal of Selected Topics in Quantum Electronics, 2000
- Deposition of Ti:sapphire thin films by reactive pulsed laser ablation using liquid metals and oxygenApplied Physics A, 1999
- Structure of α-Al2O3(0001) surface and Ti deposited on α-Al2O3(0001) substrate: CAICISS and RHEED studySurface Science, 1999
- Formation of Z-Ti50Al30O20 in the sub-oxide zones of γ-TiAl-based alloys during oxidation at 1000°CActa Materialia, 1999
- Shallow implantation of Ti+ ions in sapphire [α-Al2O3(0001)]Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
- Interface formation between ultrathin films of titanium and (0001) sapphire substratesSurface Science, 1998
- Growth and structure of internal Cu/Al2O3 and Cu/Ti/Al2O3 interfacesActa Materialia, 1998
- The surface and interface reaction of metal thin film on sapphire substrateApplied Surface Science, 1996
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981