High-frequency oscillations of p++-n+-n-n++avalanche diodes below the transit-time cutoff
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (1), 151-158
- https://doi.org/10.1109/t-ed.1966.15649
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Avalanche—Negative resistance two-terminal oscillatorProceedings of the IEEE, 1965
- A Silicon Diode Microwave OscillatorBell System Technical Journal, 1965
- Avalanche Effects in Silicon p—n Junctions. I. Localized Photomultiplication Studies on MicroplasmasJournal of Applied Physics, 1963
- Three-Layer Negative-Resistance and Inductive Semiconductor DiodesProceedings of the IRE, 1961
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Avalanche injection diodesSolid-State Electronics, 1960
- Threshold Energy for Electron-Hole Pair-Production by Electrons in SiliconPhysical Review B, 1957
- Microplasmas in SiliconPhysical Review B, 1957
- Avalanche Breakdown in SiliconPhysical Review B, 1954
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942