Three-Layer Negative-Resistance and Inductive Semiconductor Diodes

Abstract

This paper shows that in transistor-like three-layer structures with the base either open-circuited or directly shorted to the emitter region, negative resistances are observed when any two of several effects listed occur simultaneously. At higher frequencies, an inductance is often associated with the negative resistance. A few typical devices are analyzed illustrating an approach to the design theory and showing that the component values achieved (-R and L) lie in the region of major circuit interest. Some of the structures offer hope of providing negative resistances and variable inductances in the microwave region; others appear promising as fast switching elements or as replacements for wound coils in microcircuitry.