InGaAsP/InP distributed-feedback injection lasers fabricated by one-step liquid phase epitaxy
- 15 September 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (6), 441-443
- https://doi.org/10.1063/1.91165
Abstract
Fabrication and lasing characteristics of InGaAsP/InP distributed‐feedback injection lasers are described. An InGaAsP active layer, a p‐InP clad layer, and an n‐InGaAsP cap layer are successively grown on an InP substrate with a 0.32‐μm periodic corrugation. The diodes emit at a wavelength of 1.1 μm up to 170 K under pulsed operation. Single longitudinal mode oscillation and a small temperature dependence of the lasing wavelength of 0.054 nm/K are obtained in these diodes.Keywords
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