cw operation of distributed-feedback GaAs-GaAlAs diode lasers at temperatures up to 300 K
- 1 October 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (7), 403-405
- https://doi.org/10.1063/1.88492
Abstract
Distributed‐feedback GaAs‐GaAlAs diode lasers with separate optical and carrier confinement have been successfully operated under dc bias up to room temperature. They lased in a single longitudinal mode with a threshold current density of 0.94 kA/cm2 at 170 K and 3.5 kA/cm2 at 300 K.Keywords
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