Growth of PbTe films under near-equilibrium conditions
- 1 January 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (1), 446-448
- https://doi.org/10.1063/1.323357
Abstract
Using a vacuum evaporation method, we have deposited, on BaF2 substrates, PbTe films which are free of significant strains and have Hall mobilities as large as 2.5×106 cm2/V sec at 13 °K. This was accomplished by putting the emphasis on growth under near‐equilibrium conditions rather than on growth under ultraclean conditions.Keywords
This publication has 8 references indexed in Scilit:
- Epitaxial deposition of infrared active devices on an insulating substrateApplied Physics Letters, 1976
- The use of a phase diagram as a guide for the growth of PbTe filmsApplied Physics Letters, 1975
- High mobility as-growm PbTe films prepared by the hot wall techniqueThin Solid Films, 1974
- Epitaxial PbSe Schottky-barrier diodes for infrared detectionApplied Physics Letters, 1974
- Injection luminescence and laser action in epitaxial PbTe diodesApplied Physics Letters, 1972
- High-Mobility Epitaxial Layers of PbTe and Pb1−xSnxTe Prepared by Post-Growth AnnealingJournal of Applied Physics, 1971
- Compensation and ionized defect scattering in PbTeSolid State Communications, 1970
- Epitaxial Growth of Lead Tin TellurideJournal of Applied Physics, 1970