Room temperature continuous-wave photopumped operation of 1.22 [micro sign]m GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser
- 1 January 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (11), 959-960
- https://doi.org/10.1049/el:19970636
Abstract
Photopumped operation of a vertical-cavity surface-emitting laser using a single GaInNAs/GaAs quantum well active layer is demonstrated for the first time. The device lases at continuous-wave at room temperature, with an active wavelength of 1.22 µm and a threshold pump intensity of 3–5 kW/cm2, for an equivalent current density of 2–3 kA/cm2.Keywords
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