Continuous-wave operation up to 36/spl deg/C of 1.3-μm GaInAsP-InP vertical-cavity surface-emitting lasers
- 1 February 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 9 (2), 141-142
- https://doi.org/10.1109/68.553065
Abstract
We introduced ion-beam assisted deposition in order to improve the quality of Al/sub 2/O/sub 3/ and SiO/sub 2/, which were used as part of the mirrors of 1.3-/spl mu/m GaInAsP-InP vertical-cavity surface-emitting lasers (VCSELs). The refractive index of Al/sub 2/O/sub 3/ was improved to 1.63 from 1.56 and the one of SiO/sub 2/ increased to 1.47 from 1.45. Low-threshold room-temperature continuous-wave (CW) operation of 1.3-/spl mu/m VCSEL with the improved mirrors was demonstrated. The threshold current was 2.4 mA at 20/spl deg/C. The CW operating temperature was raised to 36/spl deg/C, which is a record high temperature for 1.3-/spl mu/m VCSEL.Keywords
This publication has 7 references indexed in Scilit:
- 1.3-μm GaInAsP/InP Multi-Quantum-Well Surface-Emitting LasersOptical Review, 1996
- Low threshold room temperature continuous wave operation of 1.3 [micro sign]m GaInAsP/InP strained layer multiquantum well surface emitting laserElectronics Letters, 1996
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995
- GaInAsP/InP SBH surface emitting laser with Si/Al2O3 mirrorElectronics Letters, 1995
- Low threshold, wafer fused long wavelength vertical cavity lasersApplied Physics Letters, 1994
- Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laserElectronics Letters, 1993
- Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasersIEEE Photonics Technology Letters, 1991