The influence of nanocrystals on the dielectric function of porous silicon
- 1 January 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 63 (1-4), 57-61
- https://doi.org/10.1016/0169-4332(93)90064-i
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Chemical composition of porous silicon layers studied by IR spectroscopyApplied Surface Science, 1993
- The origin of visible luminescencefrom “porous silicon”: A new interpretationSolid State Communications, 1992
- Optical characterization of porous silicon layers formed on heavily p-doped substratesApplied Surface Science, 1992
- Electroluminescence in the visible range during anodic oxidation of porous silicon filmsApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Study of the optical transitions in poly- and micro-crystalline Si by spectroscopic ellipsometrySolid State Communications, 1988
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related SemiconductorsPhysical Review B, 1967