Epitaxial effects on coherent phase diagrams of alloys
- 15 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (6), 4062-4089
- https://doi.org/10.1103/physrevb.40.4062
Abstract
We present a cluster-based description of coherent binary or pseudobinary alloys and predict and contrast bulk and epitaxial composition-temperature phase diagrams and excess thermodynamic functions. This formalism addresses in a unified way phenomena characteristic of coherent epitaxial solids, including the following: for phase-separating alloys (whose constituents are insoluble in bulk below a miscibility-gap temperature), (i) epitaxial ordered phases not present in the bulk phase diagram and (ii) a stabilization of the disordered phase to far lower temperatures; and for all alloys, (iii) epitaxial changes of order-disorder transition temperatures and (iv) the pinning (‘‘lattice latching’’) of the composition near where an epitaxial alloy is lattice matched to a given substrate. We illustrate these effects for , a typical ‘‘ordering’’ alloy (with stable ordered compounds in bulk) and for , a typical ‘‘phase-separating’’ alloy. Using a simple thermodynamic description of the reactions describing molecular-beam epitaxy growth of a coherent epitaxial isovalent semiconductor alloy, we demonstrate that composition pinning persists even in this growth method, and compare with available experiments.
Keywords
This publication has 94 references indexed in Scilit:
- Atomistic growth mechanisms for the molecular-beam epitaxy of a model systemPhysical Review B, 1989
- Ordered structure in OMVPE-grown Ga0.5In0.5PJournal of Crystal Growth, 1988
- Thermodynamic analysis of the molecular beam epitaxy of AlInAs alloysJournal of Crystal Growth, 1988
- Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phaseJournal of Crystal Growth, 1988
- The kinetic aspects of ordering in GaAs1-xSbx grown by organometallic vapor phase epitaxyJournal of Crystal Growth, 1987
- Thermodynamic analysis of molecular beam epitaxy of III–V semiconductorsJournal of Crystal Growth, 1986
- AlxGa1−xAsySb1−y phase diagramJournal of Crystal Growth, 1983
- Insulating epitaxial films of BaF2, CaF2 and BaxCa1−xF2 grown by MBE on InP substratesJournal of Crystal Growth, 1982
- Metastable Pb1−xCdxS epitaxial films II: Electrical propertiesThin Solid Films, 1978
- Metastable Pb1−xCdxS epitaxial films I. Growth and physical propertiesThin Solid Films, 1978