Atomistic growth mechanisms for the molecular-beam epitaxy of a model system
- 15 May 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (14), 9793-9796
- https://doi.org/10.1103/physrevb.39.9793
Abstract
Atomistic growth mechanisms for the molecular-beam epitaxy of a Lennard-Jones crystal are investigated by a quantitative comparison of a numerical molecular-dynamics simulation with kinetic analytic theories. We find that the growth mechanism along the (100) and (111) surfaces changes from low-temperature growth involving two-dimensional cluster nucleation on terraces to a high-temperature continuous step-propagation mechanism. This crossover in growth mechanism is found to be kinetically controlled.This publication has 28 references indexed in Scilit:
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