Pulsed laser annealing of zinc implanted GaAs

Abstract

Samples of n type GaAs implanted with 1015Zn+/cm2 at room temperature were irradiated with a ruby laser of pulse length 0.8 ms. For samples coated with Si3N4 a laser energy of 1.5–2.5 J/cm2 produced electrical activity of 40–50% of the implanted dose. Peak hole concentrations up to about 7 × 1019 cm−3 were measured. Uncoated samples irradiated with similar laser energies were not electrically active.