Implantation of Be, Cd, Mg and Zn in GaAs and GaAsl-xPx
- 1 January 1977
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- GaAs1-xPxLight Emitting Diodes Produced by Zn Ion Implantation. I. Dose Dependence of Properties of Implanted DiodesJapanese Journal of Applied Physics, 1975
- The role of elevated temperatures in the implantation of GaAsSolid-State Electronics, 1975
- Electron lifetime and diffusion constant in germanium-doped gallium arsenideJournal of Applied Physics, 1974
- Zinc ion implantation into GaAs0.62P0.38Applied Physics Letters, 1974
- Formation of the Conductive Layer near the Surface of Semi-Insulating GaAs Covered with Oxide FilmJapanese Journal of Applied Physics, 1973
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972
- Mg and Be Ion Implanted GaAsJournal of Applied Physics, 1972
- Properties of ion implanted silicon, sulfur, and carbon in gallium arsenideRadiation Effects, 1970
- Approximations and interpolation rules for ranges and range stragglingsRadiation Effects, 1970
- Electrical Properties of Zinc and Cadmium Ion Implanted Layers in Gallium ArsenideJournal of the Electrochemical Society, 1969