Measurement of Particle Deposition Velocity Toward a Horizontal Semiconductor Wafer by Using a Wafer Surface Scanner
Open Access
- 1 January 1994
- journal article
- research article
- Published by Taylor & Francis in Aerosol Science and Technology
- Vol. 21 (1), 72-82
- https://doi.org/10.1080/02786829408959697
Abstract
The average particle deposition velocity toward a horizontal semiconductor wafer in a vertical airflow was measured by a wafer surface scanner (PMS SAS-3600) to shorten the exposure time and hence to improve repeatability. Polystyrene latex (PSL) spheres with diameters between 0.2 and 1.0 μm were used. For the present experiment, convection, diffusion, and sedimentation comprise important agents of the deposition mechanism. The mean and standard deviation of average deposition velocities were obtained from more than 10 data sets for each PSL sphere size, and the deposition velocity distributions from the measurement data were compared to the theoretical distributions.Keywords
This publication has 7 references indexed in Scilit:
- Sizing Accuracy, Counting Efficiency, Lower Detection Limit and Repeatability of a Wafer Surface Scanner for Ideal and Real‐World ParticlesJournal of the Electrochemical Society, 1993
- Thermophoretic effect of particle deposition on a free standing semiconductor wafer in a clean roomJournal of Aerosol Science, 1991
- Experimental Study of Particle Deposition on Semiconductor WafersAerosol Science and Technology, 1990
- Determination of deposition velocity onto a wafer for particles in the size range between 0.03 and 0.8 μmJournal of Aerosol Science, 1989
- Particle Deposition on Semiconductor WafersAerosol Science and Technology, 1987
- Local and Average Heat Transfer Characteristics for a Disk Situated Perpendicular to a Uniform FlowJournal of Heat Transfer, 1985
- Turbulent deposition and gravitational sedimentation of an aerosol in a vessel of arbitrary shapeJournal of Aerosol Science, 1981