An improved analytical LDD-MOSFET model for digital and analog circuit simulation for all channel lengths down to deep-submicron
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Application of electrical effective channel length and external resistance measurement techniques to a submicrometer CMOS processIEEE Transactions on Electron Devices, 1989
- The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effectsIEEE Electron Device Letters, 1988
- Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET'sIEEE Transactions on Electron Devices, 1987
- On the accuracy of channel length characterization of LDD MOSFET'sIEEE Transactions on Electron Devices, 1986
- Analysis of the gate-voltage-dependent series resistance of MOSFET'sIEEE Transactions on Electron Devices, 1986
- A New Method to Determine Effective MOSFET Channel LengthJapanese Journal of Applied Physics, 1979