The molecular beam epitaxial growth of GaAs on Si(100): a variable growth temperature study
- 2 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (1-2), 25-32
- https://doi.org/10.1016/0022-0248(91)90349-a
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Characterization of the MBE growth of GaAs/Si(100) as a function of epilayer thicknessJournal of Crystal Growth, 1990
- Growth of In Ga1− As on GaAs (001) by molecular beam epitaxyJournal of Crystal Growth, 1989
- The molecular beam epitaxial growth of GaAs/Si(100): aspects of substrate preparationSemiconductor Science and Technology, 1989
- GaAs on Si and related systems: Problems and prospectsJournal of Crystal Growth, 1989
- Co-integration of GaAs MESFET and Si CMOS circuitsIEEE Electron Device Letters, 1988
- Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealingApplied Physics Letters, 1987
- Dislocation Reduction Via Annealing Of GaAs Grown On Si SubstratesPublished by SPIE-Intl Soc Optical Eng ,1987
- Polar-on-nonpolar epitaxyJournal of Crystal Growth, 1987
- MBE Growth of Low Dislocation and High Mobility GaAs-on-SiMRS Proceedings, 1986
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985