Reduction of well width fluctuation in AlGaAs-GaAs single quantum well by growth interruption during molecular beam epitaxy
- 3 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3), 71-75
- https://doi.org/10.1016/0039-6028(86)90387-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Photoluminescence from AlGaAs-GaAs Single Quentum Wells with Growth Interrupted Heterointerfaces Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Mono- and Bi-Layer Superlattices of GaAs and AlAsJapanese Journal of Applied Physics, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983