Pulsed Raman measurements of lattice temperature: Validity tests
- 1 October 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (10), 5950-5955
- https://doi.org/10.1063/1.331771
Abstract
We measure the temperature dependence of the Raman correction factors and present data on the spot size and transverse beam quality of lasers used in the pulsed Raman measurements of lattice temperature in Si. Recent criticisms are also evaluated and shown to be inappropriate or in error. Finally we measure the shift of the 520-cm−1 Raman line and find it also to be consistent with the observed Stokes/anti-Stokes ratios indicating optic phonon populations characteristic of ∼450 °C.Keywords
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