Ingot-nucleated Pb1−xSnxTe diode lasers
- 1 January 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (1), 267-271
- https://doi.org/10.1063/1.322311
Abstract
Large high‐quality Pb1−xSnxTe single crystals (x=0.13) have been grown by a horizontal vapor‐growth process in which the horizontal temperature gradient is adjusted to produce nucleation on the source ingot. The crystals are free of metallic inclusions, low‐angle grain boundaries and voids, and have bulk dislocation densities as low as 2×104/cm2. Diode lasers having up to 400‐μW single‐mode cw power near 10.6 μm have been fabricated from these crystals. Material quality, particularly dislocation density, appears to be the major factor governing device performance.Keywords
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