LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERS

Abstract

Diode lasers with emission wavelengths as long as 28 μ have been fabricated using Pb_1−xSn_xTe with x up to 0.27. Properties of laser diodes at 77°K and 12°K have been measured for a number of compositions in the range 0.15 ≤ x ≤ 0.27. The vapor growth and annealing‐diffusion steps were performed in a special quartz ampoule which remained sealed throughout the process. Threshold current densities were dependent on diode surface conditions and could be reduced by at least 50% by etching.