Dielectric Constant of a Semiconductor in an External Electric Field
- 11 March 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 143 (2), 564-568
- https://doi.org/10.1103/physrev.143.564
Abstract
The effect of a constant external electric field on the transverse dielectric constant of a semiconductor is calculated. The field produces a sharp decrease in the dielectric constant close to the threshold for an interband transition. Above the edge, the behavior is oscillatory. Numerical results have been obtained for gallium arsenide.Keywords
This publication has 22 references indexed in Scilit:
- Phonon-Assisted ElectroabsorptionPhysical Review B, 1965
- Phonon-Assisted Optical Absorption in an Electric FieldPhysical Review B, 1965
- SHIFT OF OPTICAL ABSORPTION EDGE BY AN ELECTRIC FIELD: MODULATION OF LIGHT IN THE SPACE-CHARGE REGION OF A Ge p-n JUNCTIONApplied Physics Letters, 1964
- Optical Absorption in an Electric FieldPhysical Review B, 1964
- Optical Absorption in the Presence of a Uniform FieldPhysical Review B, 1963
- Optical Absorption in an Electric FieldPhysical Review B, 1963
- Effect of a High Electric Field on the Absorption of Light by Pband HgPhysical Review B, 1962
- Electric Field Induced Light Absorption in CdSPhysical Review B, 1960
- Anwendung elektro-optischer Effekte zur Analyse des elektrischen Leitungsvorganges in CdS-EinkristallenThe European Physical Journal A, 1959
- Einfluß eines elektrischen Feldes auf eine optische AbsorptionskanteZeitschrift für Naturforschung A, 1958