Epitaxial Growth of Silicon by Vacuum Sublimation
- 1 December 1963
- journal article
- Published by Springer Nature in Nature
- Vol. 200 (4911), 1087-1088
- https://doi.org/10.1038/2001087c0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Sublimation Rate of Silicon in High VacuumJapanese Journal of Applied Physics, 1963
- Low Voltage Electron Diffraction Study of the Oxidation and Reduction of SiliconJournal of Applied Physics, 1962
- Epitaxial Growth of Silicon by Vacuum EvaporationNature, 1962