Doping dependence of crystallization growth rate in a-Si CVD films
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 807-810
- https://doi.org/10.1016/0022-3093(83)90293-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Doping effects on post-hydrogenated chemical-vapour-deposited amorphous siliconPhilosophical Magazine Part B, 1982
- Crystallization in amorphous siliconJournal of Applied Physics, 1979
- Reordering of amorphous layers of Si implanted with 31P, 75As, and 11B ionsJournal of Applied Physics, 1977
- Comparison of theory with quenching experiments for the entropy and enthalpy of vacancy formation in Si and GePhysical Review B, 1976