Evidences that P diffusion in Si is assisted mainly by vacancies
- 1 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (9), 962-964
- https://doi.org/10.1063/1.95944
Abstract
A reexamination of some experimental results, including very high concentration phosphorus diffusion with self-interstitial injection, leads to the conclusion that P diffusion is assisted mainly by vacancies. This point is also strengthened by a simple calculation showing that the dominant defect for P diffusion plays the minor role in self-diffusion.Keywords
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