Dopant diffusion in silicon: A consistent view involving nonequilibrium defects

Abstract

A numerical solution of the problem of diffusion via a dual mechanism is obtained for P, As, and B diffusion in Si by solving the full system of impurity, vacancy, and self‐interstitial continuity equations. The suitable constants are derived by fitting on experimental results for diffusions in both inert and oxidizing ambients, and lead to interesting information on silicon point defects at high temperature. In particular, it is found that dopant diffusion is essentially vacancy assisted, whereas self‐diffusion proceeds primarily via self‐interstitials.