Stress and microhardness in polycrystalline thin films from below-band-gap absorption studies
- 14 December 1995
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 28 (12), 2547-2553
- https://doi.org/10.1088/0022-3727/28/12/024
Abstract
A comprehensive model has been developed for the determination of the strain, stress and microhardness of polycrystalline thin films from the below-band-gap optical absorption data which reflect the defect states at the grain boundary regions. The model has been applied to describe the absorption data of AlN and diamond films and consequent interpretation of the mechanical properties of the same is presented.Keywords
This publication has 28 references indexed in Scilit:
- Modification of the absorption edge due to grain boundaries and mechanical stresses in polycrystalline semiconductor filmsPhysica Status Solidi (b), 1994
- The evolution of growth stresses in chemical vapor deposited tungsten films studied by in situ wafer curvature measurementsJournal of Applied Physics, 1993
- Materials with ultrafine microstructures: Retrospectives and perspectivesNanostructured Materials, 1992
- Stresses and deformation processes in thin films on substratesCritical Reviews in Solid State and Materials Sciences, 1988
- X-Ray Diffraction Determination of Stresses in Thin FilmsMRS Proceedings, 1988
- The mechanical properties of thin films: A reviewThin Solid Films, 1987
- Electronic Structure and Optical Properties of Polycrystalline Cubic SemiconductorsPhysica Status Solidi (b), 1987
- Strain relaxation mechanisms of lead and lead alloy thin films on silicon substratesThin Solid Films, 1982
- Micromechanics of films, fibrils and interfaces—an overviewThin Solid Films, 1982
- The Exponential Shape of the Optical Absorption Edge TailPhysica Status Solidi (b), 1981