Oxidation of Si surfaces
- 1 September 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (9), 3885-3887
- https://doi.org/10.1063/1.322133
Abstract
The oxide thickness for Si wafers of different doping species and densities has been measured from 30 to 1000 Å for dry O2 oxidation at 900 °C. The transition from the linear to parabolic oxide growth rate occurs near 300 Å with measured rate constants of 6 Å/min and 2500 Å2/min, respectively. Carbon in graphitic form was found on the surface of the wafers prior to oxidation. This changed to a carbide‐type form after oxidation and remained at the Si‐SiO2 interface.Keywords
This publication has 20 references indexed in Scilit:
- Formation of Ultrathin Oxide Films on SiliconJournal of the Electrochemical Society, 1972
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- Ellipsometry and the clean surfaces of silicon and germaniumSurface Science, 1971
- Thin Tunnelable Layers of Silicon Dioxide Formed by Oxidation of SiliconJournal of the Electrochemical Society, 1970
- Kinetics and mechanism of thermal oxidation of silicon with special emphasis on impurity effectsJournal of Physics and Chemistry of Solids, 1969
- Thermal Oxidation of Silicon: Growth Mechanism and Interface PropertiesPhysica Status Solidi (b), 1967
- The influence of oxidation rate and heat treatment on the Si surface potential in the Si-SiO2systemIEEE Transactions on Electron Devices, 1966
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965
- Thermal Oxidation of Heavily Doped SiliconJournal of the Electrochemical Society, 1965
- Rates of Formation of Thermal Oxides of SiliconJournal of the Electrochemical Society, 1964