Transport and localization in crystals at low doping
- 1 January 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (1), 515-518
- https://doi.org/10.1103/physrevb.45.515
Abstract
We report in-plane transport properties of crystals prepared in low-doped (x∼0.01–0.11), nonsuperconducting compositions. The large negative Hall coefficient and thermopower S in these samples confirm the presence of a small density of n-type carriers. At low T we find a highly anisotropic negative magnetoresistance which, together with the behavior of ρ, S, and , demonstrates two-dimensional weak localization of these carriers occurring as Ce content decreases. Analysis of the magnetoresistance data reveals an anomalously weak T dependence of the electron inelastic-scattering rate 1/.
Keywords
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