InP-based nonlinearly-optimized transconductance field-effect transistor (NOTFET)
- 1 January 1990
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Novel high performance self-aligned 0.15 micron long T-gate AlInAs-GaInAs HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 5-100 GHz InP CPW MMIC 7-section distributed amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 94 GHz InP MMIC five-section distributed amplifierElectronics Letters, 1990
- A 0.25- mu m gate-length pseudomorphic HFET with 32-mW output power at 94 GHzIEEE Electron Device Letters, 1989
- Millimetre-wave active probe frequency-multiplier for on-wafer characterisation of GaAs devices and ICsElectronics Letters, 1989
- 100 GHz active electronic probe for on-wafer S-parameter measurementsElectronics Letters, 1989
- Design and Performance of a 45-GHz HEMT MixerIEEE Transactions on Microwave Theory and Techniques, 1986
- Design of Microwave GaAs MESFET's for Broad-Band Low-Noise AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1979
- Microwave Field-Effect Transistors - 1976IEEE Transactions on Microwave Theory and Techniques, 1976