Parameters for i n s i t u growth of high T c superconducting thin films using an oxygen plasma source
- 1 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (5), 441-443
- https://doi.org/10.1063/1.100614
Abstract
Superconducting thin films of Dy‐Ba‐Cu‐O have been grown on 3 in. sapphire wafers with a molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allows growth on a relatively low‐temperature substrate kept below 600 °C followed by an in situ anneal below 400 °C. Thin films of Dy‐Ba‐Cu‐O which were fully superconducting at 40 K have been fabricated by this in situ growth process.Keywords
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