EVIDENCE OF EXCESS SILICON IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS
- 15 December 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (12), 383-385
- https://doi.org/10.1063/1.1728222
Abstract
Results of etch rate, index of refraction, uv transmission, and dc conductivity measurements made on reactively sputtered Si3N4 films are compared with results of similar measurements made on pyrolytically deposited Si3N4 films. The observed differences in the results indicate that reactively sputtered films contain excess Si. Heating the sputtered films in vacuum, N2, or A changes the observed properties. The changes are interpreted as being due to the reaction of some of the excess Si with trapped N2 in the films.Keywords
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