Electrical properties of Al2O3 and AlPxOy dielectric layers on InP
- 1 March 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 113 (2), 85-92
- https://doi.org/10.1016/0040-6090(84)90017-8
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Enhancement type InP metal-insulator-semiconductor field-effect transistor with plasma anodic aluminium oxide as the gate insulatorApplied Physics Letters, 1982
- Electrical properties of SiO2 and Si3N4 dielectric layers on InPJournal of Vacuum Science and Technology, 1981
- Thermal oxidation of InP in phosphorus pentoxide vaporJournal of Applied Physics, 1981
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFETJapanese Journal of Applied Physics, 1980
- Thermal oxidation of InP and properties of oxide filmJournal of Applied Physics, 1980
- Carrier generation and trapping in n-InP/SiO2 capacitorsJournal of Vacuum Science and Technology, 1979
- Capacitance-voltage and surface photovoltage measurements of pyrolytically deposited SiO2 on InPThin Solid Films, 1979
- InP–SiO2 m.i.s. structure with reduced interface state density near conduction bandElectronics Letters, 1978
- InP/SiO2 MIS structureJournal of Applied Physics, 1976
- An InP MIS diodeApplied Physics Letters, 1976