An InP MIS diode

Abstract

Wet chemical anodic oxidation of InP in a 1% by weight solution of sodium salicylate in ethyl alcohol is shown to result in the growth of a high‐quality dielectric layer. Resistivities in excess of 10¹³ Ω cm at room temperature have been realized with breakdown fields ∼10⁶ V/cm. Apparent surface state densities as determined from 1‐MHz capacitance‐voltage plots are in the range 3–4×10¹¹ cm⁻² eV⁻¹ over a large portion of the band gap.