Drift velocity saturation in MOS transistors
- 1 June 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (6), 481-482
- https://doi.org/10.1109/t-ed.1970.17014
Abstract
It is shown that the drift velocity saturation of the current carriers in the channel of a MOSFET iS an important factor in the analysis of the electrical behavior of such devices. The theory presented here, which includes this effect, shows improved agreement with measured output characteristics.Keywords
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