Gold diffusion in InP
- 1 August 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (3), 824-827
- https://doi.org/10.1063/1.339713
Abstract
InP device degradations have often been related to the presence in the active layer of gold atoms having migrated from the contacts. We have studied gold thermal diffusion in InP in the temperature range 400–700 °C, using secondary ion mass spectrometry (SIMS). We have pointed out SIMS artifacts and how to avoid them. We have found small values for the diffusion coefficient: 2×10−12 cm2/s at 550 °C. By deep-level transient spectroscopy measurements, gold appeared to behave as a shallow donor, with a level situated at 0.55 eV from the conduction band. Our conclusion is that gold thermal migration from the contact is not the mechanism responsible for the device degradation.Keywords
This publication has 8 references indexed in Scilit:
- Oxygen-induced segregation effects in sputter depth-profilingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Thermal reaction of gold metallization on InPJournal of Applied Physics, 1985
- Direct evidence for the role of gold migration in the formation of dark-spot defects in 1.3-μm InP/InGaAsP light-emitting diodesApplied Physics Letters, 1984
- The origin of dark spot defects in InPInGaAsP aged light emitting diodesMaterials Letters, 1984
- [Back cover]IEEE Transactions on Electron Devices, 1983
- Mechanism of catastrophic degradation in InGaAsP/InP double-heterostructure light emitting diodes and GaAlAs double-heterostructure light emitting diodes applied with pulsed large currentJournal of Applied Physics, 1982
- Metallurgical Behavior of Gold‐Based Ohmic Contacts to the InP / InGaAsP Material SystemJournal of the Electrochemical Society, 1982
- Low resistance ohmic contacts to n- and p-InPSolid-State Electronics, 1981