Resonant tunneling through single layer heterostructures

Abstract

A new resonant tunneling process is discussed theoretically. The process relies on elastic intervalley transfers between different band minima, e.g., between Γ and X minima in a GaAs‐AlAs system. Single layer GaAs‐AlAs‐GaAs heterostructures are analyzed. An effective mass envelope function approach is used, and a delta‐function transfer potential at heterointerfaces is employed. A resonance in the transmission coefficient is clearly seen, which gives rise to a negative differential resistance region in the current‐voltage characteristic.