Mechanisms of GaAs growth using tertiarybutylarsine and trimethylgallium
- 31 March 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (3), 673-682
- https://doi.org/10.1016/0022-0248(89)90091-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Decomposition mechanisms of tertiarybutylarsineJournal of Crystal Growth, 1989
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988
- Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAsApplied Physics Letters, 1988
- Use of tertiarybutylarsine in the metalorganic chemical vapor deposition growth of GaAsApplied Physics Letters, 1987
- Use of tertiarybutylarsine for GaAs growthApplied Physics Letters, 1987
- The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructuresJournal of Crystal Growth, 1986
- Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPEJournal of Electronic Materials, 1983