On the relationship between the feedback charge method, charge transient spectroscopy and C-V measurements of semiconductors and insulators
- 1 August 1992
- journal article
- Published by IOP Publishing in Measurement Science and Technology
- Vol. 3 (8), 726-731
- https://doi.org/10.1088/0957-0233/3/8/008
Abstract
The feedback charge method, originally proposed for quasi-static C-V measurements, is treated with regard to filtering of multi-exponential charge transients in both semiconductor devices and insulators. An intimate relationship between the feedback charge method and deep-level transient spectroscopy is established. The only condition to be applied is to use a unique and sufficiently small excitation voltage step Delta U from the region where the response is linear in Delta U in either case. Improved spectral resolution of time constants is mediated by a higher order filtering of the transient response, advanced to that current in charge transient spectroscopy. The knowledge of relative contributions of individual relations to the total transient charge is a a requisite for a meaningful interpretation of capacitance data. Finally, the relations of equivalence between the small-signal time-dependent capacitance and its frequency domain counterpart measured by standard ways are derived and their applicability discussed.Keywords
This publication has 4 references indexed in Scilit:
- Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS)Japanese Journal of Applied Physics, 1987
- Improved feedback charge method for quasistatic C V measurements in semiconductorsReview of Scientific Instruments, 1986
- Transient distortion and nth order filtering in deep level transient spectroscopy (DnLTS)Solid-State Electronics, 1981
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974