INFLUENCE OF IMPURITIES ON Si (111) SURFACE STRUCTURES
- 15 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (2), 80-83
- https://doi.org/10.1063/1.1653317
Abstract
In situ LEED studies of the homoepitaxial growth of Si (111) films by uhv sublimation indicate that the surface structures which develop are strongly influenced by the metallic impurity content of the silicon substrates, as judged from minority carrier lifetimes. The development of the familiar Si (111)−7×7 LEED pattern at a given annealing or homoepitaxial growth temperature appears to be favored on silicon substrates possessing low lifetimes. Experiments where Fe is introduced prior to annealing and film growth on high‐lifetime silicon suggest that this impurity species can lead to the formation of the Si (111)−7×7 surface structure.Keywords
This publication has 13 references indexed in Scilit:
- Carrier Lifetimes in Semiconductors with Two Interacting or Two Independent Recombination LevelsPhysical Review B, 1970
- Segregation of gold to the silicon (111) surface observed by Auger emission spectroscopy and by LEEDJournal of Physics D: Applied Physics, 1969
- ON THE NATURE OF Si (111) SURFACESApplied Physics Letters, 1969
- Thin reaction layers and the surface structure of silicon (111)Surface Science, 1969
- SILICON (111) 7×7 STRUCTUREApplied Physics Letters, 1969
- SILICON SURFACE STRUCTUREApplied Physics Letters, 1968
- On the nature of annealed semiconductor surfacesPhysics Letters A, 1968
- Leed study of a nickel induced surface structure on silicon (111)Surface Science, 1967
- A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA-HIGH VACUUMApplied Physics Letters, 1967
- A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMSApplied Physics Letters, 1967