A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA-HIGH VACUUM

Abstract

The homo‐epitaxial growth of thick films of silicon, grown by sublimation in vacuo of about 10^‐10 torr, has been investigated by means of low‐energy electron diffraction (LEED) and transmission electron microscopy. In films grown on (111), stacking faults appear at substrate temperatures below 600°C, and increase in density with further decrease in growth temperature. Their appearance is correlated with the development of a mixed Si(111)‐5, Si(111)‐7 surface structure in this temperature range. It is proposed that these faults are generated by a new mechanism, whereby their nucleation is attributed to the formation of Si(111)‐5 domains on the initial Si(111)‐7 substrate surface.