Uniformity of quantum well heterostructure GaAlAs lasers grown by metalorganic chemical vapor deposition
- 15 September 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (6), 501-504
- https://doi.org/10.1063/1.93586
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Performance and characterization of GaAs-(GaAl)As double heterojunction lasers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1981
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