Endurance studies on MNOS devices
- 1 August 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (8), 4556-4559
- https://doi.org/10.1063/1.325467
Abstract
The effect of write‐erase cycling on surface‐state generation and on retentivity in MNOS devices was studied. Annealing behavior of surface states and of threshold‐voltage‐decay rates was investigated. It is concluded that the threshold‐voltage‐decay rate is not controlled by surface states but by the nitride conductivity.Keywords
This publication has 6 references indexed in Scilit:
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- Charge-pumping investigations on MNOS structuresIEEE Transactions on Electron Devices, 1977
- Endurance and memory decay of MNOS devicesJournal of Applied Physics, 1976
- Bias-Temperature-Stress Studies of Charge Retention in Dual-Dielectric, Charge-Storage CellsBell System Technical Journal, 1974
- Interfacial Dopants for Dual-Dielectric, Charge-Storage CellsBell System Technical Journal, 1974
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969