Extension of the Aukerman-Willardson Two-Band Hall Coefficient Analysis

Abstract

Aukerman and Willardson's analysis of the temperature dependence of the two‐band Hall coefficient is extended to higher carrier concentrations, where the statistics are no longer classical. It is shown that the Hall coefficient behavior evolves in a characteristic fashion, and that useful information may be extracted from this behavior. Experimental Hall data on n‐type GaAs and GaSb and on p‐type GeTe, SnTe, PbTe, and Bi₂Te₃ are found to conform to the predictions of the theory. The importance of distinguishing carefully between the effects of temperature and carrier concentration is emphasized, and it is shown that confusing the two can and has led to erroneous interpretations of experimental data.