Negative transconductance resonant tunneling field-effect transistor

Abstract

The operation of a new resonant tunneling transistor is reported. The field-effect transistorlike structure contains a double barrier in the gate. Resonant tunneling through the gate can be quenched by varying the drain or gate bias, leading respectively to negative conductance and negative transconductance in the drain current. Dramatic differences in the negative conductance and transconductance regions of the current-voltage characteristic are observed for opposite bias polarities. This different behavior directly demonstrates the role, in controlling resonant tunneling, of the electron accumulation and depletion layers in the channel adjacent to the double barrier.