Shutterless nitrogen flux modulation using a dual-mode rf-plasma operation during RF-MBE growth of GaN
- 3 January 2007
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 204 (1), 277-281
- https://doi.org/10.1002/pssa.200673574
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Buffer design for nitrogen polarity GaN on sapphire by RF-MBE and application to the nanostructure formation using KOH etchingPhysica E: Low-dimensional Systems and Nanostructures, 2006
- Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxyApplied Physics Letters, 2001
- 2.6 μm/h High-Speed Growth of GaN by RF-Molecular Beam Epitaxy and Improvement of Crystal Quality by Migration Enhanced EpitaxyPhysica Status Solidi (a), 1999
- Study on the initial stages of heteroepitaxial growth of hexagonal GaN on sapphire by plasma assisted MBEJournal of Crystal Growth, 1998
- Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxyJournal of Applied Physics, 1997
- On the E - H mode transition in RF inductive dischargesJournal of Physics D: Applied Physics, 1996
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN filmsApplied Physics Letters, 1996
- High-density plasma mode of an inductively coupled radio frequency dischargeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991